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Tag: Process induced strained silicon

PMOS is no longer the Culprit

Posted on March 23, 2016June 17, 2025 By Jitendra No Comments on PMOS is no longer the Culprit

MOS scaling has introduced many undesired effects, known second order ones being channel length modulation, velocity saturation, mobility degradation etc. These are introducing a new set of challenges for the designers. From the performance perspective, supply voltage scaling has reduced the driving capability of MOS due to decrease in effective overdrive voltage. On the other…

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